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Dr. Ursel Bangert

Biography

About Ursel


Ursel Bangert is Bernal Chair in Microscopy and Imaging at the University of Limerick, following positions of Reader and Lecturer at the Universities of Manchester and Surrey, and a career of more than 30 years in the area of electron microscopy. She has been heavily involved in the conception and managerial activities of Electron Microscopy Facilities at Liverpool (NorthWest STEM; Co-I) and at Daresbury (SuperSTEM; Co-I), and has been overseeing the Manchester University School of Materials Electron Optical facilities. She is currently building up an International Centre for Ultra-High Resolution Imaging and Characterisation at the University of Limerick, where she obtained funding for a world-class Titan Themis double corrected, monochromated, analytical transmission electron microscope with in-situ measurement capabilities.

Ursel Bangert's research activities concentrate on investigations of microstructure and growth phenomena and related plasmonic and opto-electronic properties of materials, especially semiconducting and low-dimensional nano-materials, having lead to sustained research output (180+ papers including Nature papers, Review Articles, Perspectives, and 50+ refereed conference papers, not including the 60 or so un-refereed conference papers). She has contributed prolifically at national and international conferences, delivered numerous invited talks and seminars (details can be found on Scopus). She has pioneered low loss electron energy loss (EEL) spectroscopy for highly spatially resolved electronic structure studies in wide bandgap semiconductors and diamond as well as single atom spectroscopy of carbon nanotubes. Since its discovery she has worked on Graphene (and other 2-Ds discovered shortly thereafter), carrying out electron microscopy in the Manchester Graphene Group (A. Geim, Nobel Prize 2010), and was first to conduct atomic resolution HAADF imaging and morphology studies via electron diffraction, as well as electron energy loss spectroscopy on this material.

Her intention and vision has been and is to use top-of-the-range Electron Microscopy instrumentation to see and understand materials on the atomic scale, i.e., to further the topic of highly spatially resolved (single atom) imaging in combination with atomic scale spectroscopy so as to access/assess the electronic and optical properties of materials, in particular of nano-materials (novel 2-, 1- and 0-dimensional materials), and to furthermore combine this with in-situ techniques, so as to directly follow the atomic-scale behaviour of such materials. e.g., under electrical bias or in chemical-atmosphere conditions. All this will serve fundamental research, and exploration of practical use of these nanostructures in photo-emission, sunlight harvesting and photovoltaics, with the aim of designing prototype devices.

Research Interests


Ursel Bangert's current research is focussed on fundamental investigations of the local dependence of opto-electronic properties and tailoring thereof, in 1D semiconductor assemblies, carbon nanotubes, graphene and other novel 2-D materials, e.g., transition metal dichalcogenides and MXene, aiming at practical use in photo-emission, optical enhancers, wave guides, photovoltaics, quantum metrology and at design of prototype devices.


She has pioneered work in ultrahigh resolution high angle dark field imaging of graphene (first to show atomic-scale impurity and defect behaviour, e.g., metal-atom mediated graphene etching and healing), in tailoring plasmon characteristics of graphene, and in single atom spectroscopy (first to demonstrate ‘spectroscopic fingerprinting' of controllably introduced foreign atoms in nano-carbons, i.e., revealing simultaneously chemical bonding configuration and lattice position of a single impurity atom. This was achieved by new developments in sub-Ǻ imaging and analytical electron microscopy (EELS) at the Daresbury SuperSTEM. Furthermore, electron energy loss spectroscopy at ultra low loss energies (valence band EELS) provided first evidence of the impact of microstructural defects on the local electronic bandstructure when combined with theoretical backup (ab initio calculations) through collaboration with theoretical groups (e.g., at Exeter and Leeds University).


Application-oriented research objectives concern tailoring and tuning of the opto-electronic properties of novel 2-D versions of dichalcogenides (including materials with negative plasmon dispersion for direct light coupling) and of MAX phases (MXenes ->unknown territory) through controlled physical and chemical functionalisation via ion beam modification. The same approach is taken with carbon nanotubes for applications in optical enhancers, wave guides, photonic and light harvesting devices as well as for integration into semiconductor electronics. Ion beam modification has also been applied for doping silica/Si-nanoscrystal systems with rare-earth elements to achieve light emission and thereby develop silicon photonics technologies.


Past research has included establishing the role of defects in the ageing and failure mechanisms of semiconductor devices. Further to the academic aspect, the investigations were aimed at trouble shooting in real devices in order to cut market losses of, e.g., semiconductor lasers. This entailed exploring electron microscopies/ spectroscopies with ultra high spatial resolution and to apply these to materials of wide and medium bandgaps enabling spatially resolved chemical and electronic structure studies, via EELS, of self-organized growth phenomena in strained III-V semiconductor hetero systems and SiGe. Thus a universal roughening transition curve (temperature versus strain) and strain driven compositional segregation in semiconductor quantum wells, wires and dots could be established. Furthermore, bandgap states at extended defects in wide band gap semiconductors, diamond and perovskites and surface plasmon phenomena in nanocarbons, semiconductor and metal nanospheres could be revealed.


A persisting goal is to improve the energy resolution in electron spectroscopy and to combine electron microscopy with simultaneous optical excitation and detection, which will enable in-situ assessment of a material's electronic bandstructure on the nanoscopic scale

Publications

Book Chapters

2011

Scanning Transmission Electron Microscopy and Spectroscopy of Suspended Graphene
Bangert U, Gass M H, Zan R, Pan C-T
(2011) Scanning Transmission Electron Microscopy and Spectroscopy of Suspended Graphene
In Physics and Applications of Graphene – Experiments; London : InTech open access publisher

2008

Nitrogen doping into carbon nanotubes using electron-loss spectroscopy
Seepujak A, Bangert U, Harvey A J, A Bleloch, Blank V D, Kulnitskyi B A, Batov D A , Polyanov E V
(2008) Nitrogen doping into carbon nanotubes using electron-loss spectroscopy
In Carbon Nanotubes and related Structures; Thiruvananthapuram, India : Research Signpost

1999

The Effects of implanted Arsenic on Ti-Silicide Formation
Milosavljevic M, Bibic N, Perusko D, Jeynes C, Bangert U
(1999) The Effects of implanted Arsenic on Ti-Silicide Formation
In Special Defects in Semiconducting Materials; Switzerland : Trans Tech Publ

1996

Transmission electron microscopy of GaAs
Bangert U
(1996) Transmission electron microscopy of GaAs
In emis data review series ; Exeter : Short Run Press

1995

Transmission Electron Microscopy of Aged Buried Heterostructure Lasers
Bangert U
(1995) Transmission Electron Microscopy of Aged Buried Heterostructure Lasers
In The Handbook of Advanced Materials Testing; Basel : Dekker

Peer Reviewed Journals

2017

Spark-Discharge Plasma as a Method to Produce Low AC Loss Multifilamentary (RE)Ba<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>Coated Conductors
Mitchell-Williams, T.B. and Baskys, A. and Guo, Y. and Hopkins, S.C. and Bangert, U. and Molodyk, A. and Petrykin, V. and Gömöry, F. and Frolek, L. and Glowacki, B.A.
(2017) Spark-Discharge Plasma as a Method to Produce Low AC Loss Multifilamentary (RE)Ba<inf>2</inf>Cu<inf>3</inf>O<inf>7</inf>Coated Conductors
In IEEE Transactions on Applied Superconductivity;
DOI: 10.1109/TASC.2017.2651584

2017

Imaging Two Dimensional Materials and their Heterostructures
Zan, R. and Ramasse, Q.M. and Jalil, R. and Tu, J.-S. and Bangert, U. and Novoselov, K.S.
(2017) Imaging Two Dimensional Materials and their Heterostructures
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/902/1/012028

2017

Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy
Bangert, U. and Stewart, A. and O'Connell, E. and Courtney, E. and Ramasse, Q. and Kepaptsoglou, D. and Hofsäss, H. and Amani, J. and Tu, J.-S. and Kardynal, B.
(2017) Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy
In Ultramicroscopy; pp. 31-36
DOI: 10.1016/j.ultramic.2016.12.011

2017

Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubes
Wang, F. and Kinloch, I.A. and Wolverson, D. and Tenne, R. and Zak, A. and O'Connell, E. and Bangert, U. and Young, R.J.
(2017) Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubes
In 2D Materials;
DOI: 10.1088/2053-1583/4/1/015007

2016

Single Atoms of Pt-Group Metals Stabilized by N-Doped Carbon Nanofibers for Efficient Hydrogen Production from Formic Acid
Bulushev, D.A. and Zacharska, M. and Lisitsyn, A.S. and Podyacheva, O.Y. and Hage, F.S. and Ramasse, Q.M. and Bangert, U. and Bulusheva, L.G.
(2016) Single Atoms of Pt-Group Metals Stabilized by N-Doped Carbon Nanofibers for Efficient Hydrogen Production from Formic Acid
In ACS Catalysis; pp. 3442-3451
DOI: 10.1021/acscatal.6b00476

2016

Collective electronic excitations in the ultra violet regime in 2-D and 1-D carbon nanostructures achieved by the addition of foreign atoms
Bangert, U. and Pierce, W. and Boothroyd, C. and Pan, C.-T. and Gwilliam, R.
(2016) Collective electronic excitations in the ultra violet regime in 2-D and 1-D carbon nanostructures achieved by the addition of foreign atoms
In Scientific Reports;
DOI: 10.1038/srep27090

2015

Atomic-scale insights into 1D and 2D nano-materials
Bangert, U. and Pierce, W. and Boothroyd, C.B. and Migliorato, M. and Pan, C.-T. and Harvey, A.J. and Kepatsoglou, D.M. and Ramasse, Q.M.
(2015) Atomic-scale insights into 1D and 2D nano-materials
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/644/1/012021

2015

Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping
Kepaptsoglou, D. and Hardcastle, T.P. and Seabourne, C.R. and Bangert, U. and Zan, R. and Amani, J.A. and Hofsäss, H. and Nicholls, R.J. and Brydson, R.M.D. and Scott, A.J. and Ramasse, Q.M.
(2015) Electronic Structure Modification of Ion Implanted Graphene: The Spectroscopic Signatures of p- and n-Type Doping
In ACS Nano; pp. 11398-11407
DOI: 10.1021/acsnano.5b05305

2015

Electronic functionalisation of graphene via external doping and dosing
Bangert, U. and Zan, R.
(2015) Electronic functionalisation of graphene via external doping and dosing
In International Materials Reviews; pp. 133-149
DOI: 10.1179/1743280414Y.0000000047

2015

Under pressure: Control of strain, phonons and bandgap opening in rippled graphene
Monteverde, U. and Pal, J. and Migliorato, M.A. and Missous, M. and Bangert, U. and Zan, R. and Kashtiban, R. and Powell, D.
(2015) Under pressure: Control of strain, phonons and bandgap opening in rippled graphene
In Carbon; pp. 266-276
DOI: 10.1016/j.carbon.2015.04.044
[ULIR]

2014

In-situ observation and atomic resolution imaging of the ion irradiation induced amorphisation of graphene
Pan, C.-T. and Hinks, J.A. and Ramasse, Q.M. and Greaves, G. and Bangert, U. and Donnelly, S.E. and Haigh, S.J.
(2014) In-situ observation and atomic resolution imaging of the ion irradiation induced amorphisation of graphene
In Scientific Reports;
DOI: 10.1038/srep06334

2014

Atom-by-atom STEM investigation of defect engineering in graphene
Ramasse, Q.M. and Kepapstoglou, D.M. and Hage, F.S. and Susi, T. and Kotakoski, J. and Mangler, C. and Ayala, P. and Meyer, J. and Hinks, J.A. and Donnelly, S. and Zan, R. and Pan, C.T. and Haigh, S.J. and Bangert, U.
(2014) Atom-by-atom STEM investigation of defect engineering in graphene
In Microscopy and Microanalysis; pp. 1736-1737
DOI: 10.1017/S1431927614010411

2014

Plasmonic enhancement at metal atoms on graphene edges revealed by EFTEM
Pierce, W. and Zan, R. and Ramasse, Q.M. and Boothroyd, C.B. and Bangert, U.
(2014) Plasmonic enhancement at metal atoms on graphene edges revealed by EFTEM
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/522/1/012078

2014

Electronic structure modification of boron and nitrogen ion-implanted graphene fingerprinted by STEM-EELS
Kepaptsoglou, D.M. and Seabourne, C.R. and Hardcastle, T. and Nicholls, R. and Pierce, W. and Zan, R. and Bangert, U. and Scott, A.J. and Ramasse, Q.M.
(2014) Electronic structure modification of boron and nitrogen ion-implanted graphene fingerprinted by STEM-EELS
In Microscopy and Microanalysis; pp. 1734-1735
DOI: 10.1017/S143192761401040X

2014

Silicon-carbon bond inversions driven by 60-kev electrons in graphene
Susi, T. and Kotakoski, J. and Kepaptsoglou, D. and Mangler, C. and Lovejoy, T.C. and Krivanek, O.L. and Zan, R. and Bangert, U. and Ayala, P. and Meyer, J.C. and Ramasse, Q.
(2014) Silicon-carbon bond inversions driven by 60-kev electrons in graphene
In Physical Review Letters;
DOI: 10.1103/PhysRevLett.113.115501

2014

Atomically resolved imaging of highly ordered alternating fluorinated graphene
Kashtiban, R.J. and Dyson, M.A. and Nair, R.R. and Zan, R. and Wong, S.L. and Ramasse, Q. and Geim, A.K. and Bangert, U. and Sloan, J.
(2014) Atomically resolved imaging of highly ordered alternating fluorinated graphene
In Nature Communications;
DOI: 10.1038/ncomms5902

2014

Corrigendum: Atomically resolved imaging of highly ordered alternating fluorinated graphene (Nature Communications (2014) 5:4902 DOI: 10.1038/ncomms5902)
Kashtiban, R.J. and Dyson, M.A. and Nair, R.R. and Zan, R. and Wong, S.L. and Ramasse, Q. and Geim, A.K. and Bangert, U. and Sloan, J.
(2014) Corrigendum: Atomically resolved imaging of highly ordered alternating fluorinated graphene (Nature Communications (2014) 5:4902 DOI: 10.1038/ncomms5902)
In Nature Communications;
DOI: 10.1038/ncomms6545

2014

High angle dark field imaging of two-dimensional crystals
Zan, R. and Ramasse, Q.M. and Jalil, R. and Georgiou, T. and Bangert, U. and Novoselov, K.S.
(2014) High angle dark field imaging of two-dimensional crystals
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/522/1/012077

2013

Control of radiation damage in MoS<inf>2</inf> by graphene encapsulation
Zan, R. and Ramasse, Q.M. and Jalil, R. and Georgiou, T. and Bangert, U. and Novoselov, K.S.
(2013) Control of radiation damage in MoS<inf>2</inf> by graphene encapsulation
In ACS Nano; pp. 10167-10174
DOI: 10.1021/nn4044035

2013

Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS<inf>2</inf>
Rice, C. and Young, R.J. and Zan, R. and Bangert, U. and Wolverson, D. and Georgiou, T. and Jalil, R. and Novoselov, K.S.
(2013) Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS<inf>2</inf>
In Physical Review B - Condensed Matter and Materials Physics;
DOI: 10.1103/PhysRevB.87.081307

2013

Mobile metal adatoms on single layer, bilayer, and trilayer graphene: An ab initio DFT study with van der Waals corrections correlated with electron microscopy data
Hardcastle, T.P. and Seabourne, C.R. and Zan, R. and Brydson, R.M.D. and Bangert, U. and Ramasse, Q.M. and Novoselov, K.S. and Scott, A.J.
(2013) Mobile metal adatoms on single layer, bilayer, and trilayer graphene: An ab initio DFT study with van der Waals corrections correlated with electron microscopy data
In Physical Review B - Condensed Matter and Materials Physics;
DOI: 10.1103/PhysRevB.87.195430

2013

Ion implantation of graphene - Toward IC compatible technologies
Bangert, U. and Pierce, W. and Kepaptsoglou, D.M. and Ramasse, Q. and Zan, R. and Gass, M.H. and Van Den Berg, J.A. and Boothroyd, C.B. and Amani, J. and Hofsäss, H.
(2013) Ion implantation of graphene - Toward IC compatible technologies
In Nano Letters; pp. 4902-4907
DOI: 10.1021/nl402812y

2012

A study of the relationship between brown colour and extended defects in diamond using core-loss electron energy loss spectroscopy
Godfrey, I.S. and Bangert, U.
(2012) A study of the relationship between brown colour and extended defects in diamond using core-loss electron energy loss spectroscopy
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/371/1/012016

2012

Direct experimental evidence of metal-mediated etching of suspended graphene
Ramasse, Q.M. and Zan, R. and Bangert, U. and Boukhvalov, D.W. and Son, Y.-W. and Novoselov, K.S.
(2012) Direct experimental evidence of metal-mediated etching of suspended graphene
In ACS Nano; pp. 4063-4071
DOI: 10.1021/nn300452y

2012

Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy
Ramasse, Q.M. and Seaboume, C.R. and Kepaptsoglou, D.-M. and Zan, R. and Bangert, U. and Scott, A.J.
(2012) Probing the bonding and electronic structure of single atom dopants in graphene with electron energy loss spectroscopy
In Nano Letters; pp. 4989-4995
DOI: 10.1021/nl304187e

2012

Graphene reknits its holes
Zan, R. and Ramasse, Q.M. and Bangert, U. and Novoselov, K.S.
(2012) Graphene reknits its holes
In Nano Letters; pp. 3936-3940
DOI: 10.1021/nl300985q

2012

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS
Ramasse, Q.M. and Alem, N. and Yazyev, O.V. and Zettl, A. and Pan, C.T. and Nair, R.R. and Jalil, R. and Zan, R. and Bangert, U. and Seabourne, C.R. and Scott, A.J. and Novoselov, K.S.
(2012) Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS
In Microscopy and Microanalysis; pp. 1526-1527
DOI: 10.1017/S1431927612009488

2012

Scanning tunnelling microscopy of suspended graphene
Zan, R. and Bangert, U. and Muryn, C. and Mattocks, P. and Hamilton, B. and Novoselov, K.S.
(2012) Scanning tunnelling microscopy of suspended graphene
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/371/1/012070

2012

Nanoscale electron diffraction and plasmon spectroscopy of single- and few-layer boron nitride
Pan, C.T. and Nair, R.R. and Bangert, U. and Ramasse, Q. and Jalil, R. and Zan, R. and Seabourne, C.R. and Scott, A.J.
(2012) Nanoscale electron diffraction and plasmon spectroscopy of single- and few-layer boron nitride
In Physical Review B - Condensed Matter and Materials Physics;
DOI: 10.1103/PhysRevB.85.045440

2012

Metals on BN studied by high resolution transmission electron microscopy
Bangert, U. and Zan, R. and Ramasse, Q. and Jalil, R. and Riaz, I. and Novoselov, K.S.
(2012) Metals on BN studied by high resolution transmission electron microscopy
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/371/1/012050

2012

Interaction of metals with suspended graphene observed by transmission electron microscopy
Zan, R. and Bangert, U. and Ramasse, Q. and Novoselov, K.S.
(2012) Interaction of metals with suspended graphene observed by transmission electron microscopy
In Journal of Physical Chemistry Letters; pp. 953-958
DOI: 10.1021/jz201653g

2012

Scanning transmission electron microscopy of metal-graphene interaction
Zan, R. and Bangert, U. and Ramasse, Q. and Novoselov, K.S.
(2012) Scanning transmission electron microscopy of metal-graphene interaction
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/371/1/012069

2012

Scanning tunnelling microscopy of suspended graphene
Zan, R. and Muryn, C. and Bangert, U. and Mattocks, P. and Wincott, P. and Vaughan, D. and Li, X. and Colombo, L. and Ruoff, R.S. and Hamilton, B. and Novoselov, K.S.
(2012) Scanning tunnelling microscopy of suspended graphene
In Nanoscale; pp. 3065-3068
DOI: 10.1039/c2nr30162h

2011

Evolution of gold nanostructures on graphene
Zan, R. and Bangert, U. and Ramasse, Q. and Novoselov, K.S.
(2011) Evolution of gold nanostructures on graphene
In Small; pp. 2868-2872
DOI: 10.1002/smll.201101169

2011

Imaging of Bernal stacked and misoriented graphene and boron nitride: Experiment and simulation
Zan, R. and Bangert, U. and Ramasse, Q. and Novoselov, K.S.
(2011) Imaging of Bernal stacked and misoriented graphene and boron nitride: Experiment and simulation
In Journal of Microscopy; pp. 152-158
DOI: 10.1111/j.1365-2818.2011.03520.x

2011

Metal-graphene interaction studied via atomic resolution scanning transmission electron microscopy
Zan, R. and Bangert, U. and Ramasse, Q. and Novoselov, K.S.
(2011) Metal-graphene interaction studied via atomic resolution scanning transmission electron microscopy
In Nano Letters; pp. 1087-1092
DOI: 10.1021/nl103980h

2011

Controlled synthesis of tuned bandgap nanodimensional alloys of PbS xSe1-x
Akhtar, J. and Afzaal, M. and Banski, M. and Podhorodecki, A. and Syperek, M. and Misiewicz, J. and Bangert, U. and Hardman, S.J.O. and Graham, D.M. and Flavell, W.R. and Binks, D.J. and Gardonio, S. and Obrien, P.
(2011) Controlled synthesis of tuned bandgap nanodimensional alloys of PbS xSe1-x
In Journal of the American Chemical Society; pp. 5602-5609
DOI: 10.1021/ja200750s

2011

Erbium environments in erbium-silicon/silica light emitting nanostructures
Kashtiban, R.J. and Bangert, U. and Crowe, I.F. and Halsall, M.P.
(2011) Erbium environments in erbium-silicon/silica light emitting nanostructures
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/281/1/012016

2011

An analysis of vacancy clusters and sp2 bonding in natural type IIa diamond using aberration corrected STEM and EELS
Godfrey, I.S. and Bangert, U.
(2011) An analysis of vacancy clusters and sp2 bonding in natural type IIa diamond using aberration corrected STEM and EELS
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/281/1/012024

2010

Spatially correlated erbium and Si nanocrystals in coimplanted SiO<inf>2</inf>after a single high temperature anneal
Crowe, I.F. and Kashtiban, R.J. and Sherliker, B. and Bangert, U. and Halsall, M.P. and Knights, A.P. and Gwilliam, R.M.
(2010) Spatially correlated erbium and Si nanocrystals in coimplanted SiO<inf>2</inf>after a single high temperature anneal
In Journal of Applied Physics;
DOI: 10.1063/1.3294645

2010

Structure of hydrogen-dosed graphene deduced from low electron energy loss characteristics and density functional calculations
Bangert, U. and Pan, C.T. and Nair, R.R. and Gass, M.H.
(2010) Structure of hydrogen-dosed graphene deduced from low electron energy loss characteristics and density functional calculations
In Applied Physics Letters;
DOI: 10.1063/1.3526373

2010

Raman study of stress effect on Ge nanocrystals embedded in Al 2O3
Pinto, S.R.C. and Rolo, A.G. and Chahboun, A. and Kashtiban, R.J. and Bangert, U. and Gomes, M.J.M.
(2010) Raman study of stress effect on Ge nanocrystals embedded in Al 2O3
In Thin Solid Films; pp. 5378-5381
DOI: 10.1016/j.tsf.2010.03.035

2010

Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM
Kashtiban, R.J. and Bangert, U. and Crowe, I. and Halsall, P. and Sherliker, B. and Harvey, J. and Eccles, J. and Knights, A.P. and Gwilliam, R. and Gass, M.
(2010) Structural and compositional study of Erbium-doped silicon nanocrystals by HAADF, EELS and HRTEM techniques in an aberration corrected STEM
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/209/1/012043

2010

Study of erbium-doped silicon nanocrystals in silica
Kashtiban, R.J. and Bangert, U. and Crowe, I.F. and Halsall, M. and Harvey, A.J. and Gass, M.
(2010) Study of erbium-doped silicon nanocrystals in silica
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/241/1/012097

2010

Ge nanocrystals in alumina matrix: A structural study
Kashtiban, R.J. and Pinto, S.R.C. and Bangert, U. and Rolo, A.G. and Chahboun, A. and Gomes, M.J.M. and Harvey, A.J.
(2010) Ge nanocrystals in alumina matrix: A structural study
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/209/1/012060

2010

Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy
Nair, R.R. and Blake, P. and Blake, J.R. and Zan, R. and Anissimova, S. and Bangert, U. and Golovanov, A.P. and Morozov, S.V. and Geim, A.K. and Novoselov, K.S. and Latychevskaia, T.
(2010) Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy
In Applied Physics Letters;
DOI: 10.1063/1.3492845

2010

Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy
Kashtiban, R.J. and Bangert, U. and Sherliker, B. and Halsall, M.P. and Harvey, A.J.
(2010) Study of InGaN/GaN quantum dot systems by TEM techniques and photoluminescence spectroscopy
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/209/1/012038

2010

Multilayers of Ge nanocrystals embedded in Al<inf>2</inf>O<inf>3</inf>matrix: Structural and electrical studies
Pinto, S.R.C. and Rolo, A.G. and Chahboun, A. and Buljan, M. and Khodorov, A. and Kashtiban, R.J. and Bangert, U. and Barradas, N.P. and Alves, E. and Bernstorff, S. and Gomes, M.J.M.
(2010) Multilayers of Ge nanocrystals embedded in Al<inf>2</inf>O<inf>3</inf>matrix: Structural and electrical studies
In Microelectronic Engineering; pp. 2508-2512
DOI: 10.1016/j.mee.2010.06.002

2010

Do nanomaterials form truly homogeneous alloys?
Eccles, J.W.L. and Bangert, U. and Bromfield, M. and Christian, P. and Harvey, A.J.
(2010) Do nanomaterials form truly homogeneous alloys?
In Journal of Applied Physics;
DOI: 10.1063/1.3428455

2010

Structural study of Si<inf>1 - x</inf>Ge<inf>x</inf>nanocrystals embedded in SiO<inf>2</inf>films
Pinto, S.R.C. and Kashtiban, R.J. and Rolo, A.G. and Buljan, M. and Chahboun, A. and Bangert, U. and Barradas, N.P. and Alves, E. and Gomes, M.J.M.
(2010) Structural study of Si<inf>1 - x</inf>Ge<inf>x</inf>nanocrystals embedded in SiO<inf>2</inf>films
In Thin Solid Films; pp. 2569-2572
DOI: 10.1016/j.tsf.2009.09.148

2010

Atomic structure-colour relationship in natural diamonds
Godfrey, I.S. and Bangert, U.
(2010) Atomic structure-colour relationship in natural diamonds
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/241/1/012053

2010

Doping of few-layered graphene and carbon nanotubes using ion implantation
Bangert, U. and Bleloch, A. and Gass, M.H. and Seepujak, A. and Van Den Berg, J.
(2010) Doping of few-layered graphene and carbon nanotubes using ion implantation
In Physical Review B - Condensed Matter and Materials Physics;
DOI: 10.1103/PhysRevB.81.245423

2009

Optical and microstructural studies of InGaN/GaN quantum dot ensembles
Davies, S.C. and Mowbray, D.J. and Ranalli, F. and Parbrook, P.J. and Wang, Q. and Wang, T. and Yea, B.S. and Sherliker, B.J. and Halsall, M.P. and Kashtiban, R.J. and Bangert, U.
(2009) Optical and microstructural studies of InGaN/GaN quantum dot ensembles
In Applied Physics Letters;
DOI: 10.1063/1.3226645

2009

Vacancy clusters, dislocations and brown colouration in diamond
Bangert, U. and Barnes, R. and Gass, M.H. and Bleloch, A.L. and Godfrey, I.S.
(2009) Vacancy clusters, dislocations and brown colouration in diamond
In Journal of Physics Condensed Matter;
DOI: 10.1088/0953-8984/21/36/364208

2009

Growth and characterisation of BNC nanostructures
Blank, V.D. and Seepujak, A. and Polyakov, E.V. and Batov, D.V. and Kulnitskiy, B.A. and Parkhomenko, Yu.N. and Skryleva, E.A. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J.
(2009) Growth and characterisation of BNC nanostructures
In Carbon; pp. 3167-3174
DOI: 10.1016/j.carbon.2009.07.022

2009

Manifestation of ripples in free-standing graphene in lattice images obtained in an aberration-corrected scanning transmission electron microscope
Bangert, U. and Gass, M.H. and Bleloch, A.L. and Nair, R.R. and Geim, A.K.
(2009) Manifestation of ripples in free-standing graphene in lattice images obtained in an aberration-corrected scanning transmission electron microscope
In Physica Status Solidi (A) Applications and Materials Science; pp. 1117-1122

2009

Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix
Buljan, M. and Pinto, S.R.C. and Kashtiban, R.J. and Rolo, A.G. and Chahboun, A. and Bangert, U. and Levichev, S. and Hol, V. and Gomes, M.J.M.
(2009) Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix
In Journal of Applied Physics;
DOI: 10.1063/1.3248373

2009

Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness
Kashtiban, R.J. and Bangert, U. and Missous, M.
(2009) Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness
In Microelectronics Journal; pp. 479-482
DOI: 10.1016/j.mejo.2008.06.078

2009

Nanotopography of graphene
Bangert, U. and Gass, M.H. and Bleloch, A.L. and Nair, R.R. and Eccles, J.
(2009) Nanotopography of graphene
In Physica Status Solidi (A) Applications and Materials Science; pp. 2115-2119
DOI: 10.1002/pssa.200982207

2008

Plasmon spectroscopy of free-standing graphene films
Eberlein, T. and Bangert, U. and Nair, R.R. and Jones, R. and Gass, M. and Bleloch, A.L. and Novoselov, K.S. and Geim, A. and Briddon, P.R.
(2008) Plasmon spectroscopy of free-standing graphene films
In Physical Review B - Condensed Matter and Materials Physics;
DOI: 10.1103/PhysRevB.77.233406

2008

Spatially-resolved EEL studies of plasmons in silver filled carbon nanotubes using a dedicated STEM
Bangert, U. and Harvey, A.J. and Seepujak, A.
(2008) Spatially-resolved EEL studies of plasmons in silver filled carbon nanotubes using a dedicated STEM
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/126/1/012087

2008

Macroscopic graphene membranes and their extraordinary stiffness
Booth, T.J. and Blake, P. and Nair, R.R. and Jiang, D. and Hill, E.W. and Bangert, U. and Bleloch, A. and Gass, M. and Novoselov, K.S. and Katsnelson, M.I. and Geim, A.K.
(2008) Macroscopic graphene membranes and their extraordinary stiffness
In Nano Letters; pp. 2442-2446
DOI: 10.1021/nl801412y

2008

Analysis of VEEL spectra of diamond using a dedicated STEM: Isolation of erenkov loss contributions
Eccles, J.W.L. and Bangert, U.
(2008) Analysis of VEEL spectra of diamond using a dedicated STEM: Isolation of erenkov loss contributions
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/126/1/012004

2008

STEM plasmon spectroscopy of free standing graphene
Bangert, U. and Eberlein, T. and Nair, R.R. and Jones, R. and Gass, M. and Bleloch, A.L. and Novoselov, K.S. and Geim, A. and Briddon, P.R.
(2008) STEM plasmon spectroscopy of free standing graphene
In Physica Status Solidi (A) Applications and Materials Science; pp. 2265-2269
DOI: 10.1002/pssa.200879707

2008

Electron energy loss spectroscopy on alkylated silicon nanocrystals
Coxon, P.R. and Chao, Y. and Horrocks, B.R. and Gass, M. and Bangert, U. and Å iller, L.
(2008) Electron energy loss spectroscopy on alkylated silicon nanocrystals
In Journal of Applied Physics;
DOI: 10.1063/1.3000566

2008

Intact sublimation of silicon nanocrystals evidenced via HREM imaging and EELS in a dedicated STEM
Bangert, U. and Gass, M. and Siller, L. and Coxon, R. and Chao, Y. and Horrocks, B.R.
(2008) Intact sublimation of silicon nanocrystals evidenced via HREM imaging and EELS in a dedicated STEM
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/126/1/012066

2008

Free-standing graphene at atomic resolution
Gass, M.H. and Bangert, U. and Bleloch, A.L. and Wang, P. and Nair, R.R. and Geim, A.K.
(2008) Free-standing graphene at atomic resolution
In Nature Nanotechnology; pp. 676-681
DOI: 10.1038/nnano.2008.280

2008

Single atom electron energy-loss spectroscopy of implanted ions in carbon nanotubes
Bangert, U. and Bleloch, A.L. and Gass, M. and Van Den Berg, J. and Harvey, A.J. and Seepujak, A.
(2008) Single atom electron energy-loss spectroscopy of implanted ions in carbon nanotubes
In Journal of Physics: Conference Series;
DOI: 10.1088/1742-6596/126/1/012018

2007

An in vitro study of the potential of carbon nanotubes and nanofibres to induce inflammatory mediators and frustrated phagocytosis
Brown, D.M. and Kinloch, I.A. and Bangert, U. and Windle, A.H. and Walter, D.M. and Walker, G.S. and Scotchford, C.A. and Donaldson, K. and Stone, V.
(2007) An in vitro study of the potential of carbon nanotubes and nanofibres to induce inflammatory mediators and frustrated phagocytosis
In Carbon; pp. 1743-1756
DOI: 10.1016/j.carbon.2007.05.011

2007

Investigating large vacancy clusters in type IIa diamond with electron energy loss spectroscopy (EELS)
Barnes, R. and Bangert, U. and Scott, A.
(2007) Investigating large vacancy clusters in type IIa diamond with electron energy loss spectroscopy (EELS)
In Physica Status Solidi (A) Applications and Materials Science; pp. 3065-3071
DOI: 10.1002/pssa.200776323

2007

EELS study of oxidation state of tungsten in anodic alumina film formed on Al-6·5 at.-%W alloy
Bangert, U. and Zhou, X. and Iglesias-Rubianes, L. and Skeldon, P. and Thompson, G.E.
(2007) EELS study of oxidation state of tungsten in anodic alumina film formed on Al-6·5 at.-%W alloy
In Transactions of the Institute of Metal Finishing; pp. 306-309
DOI: 10.1179/174591907X246474

2007

Evaporation and deposition of alkyl-capped silicon nanocrystals in ultrahigh vacuum
Chao, Y. and Å iller, L. and Krishnamurthy, S. and Coxon, P.R. and Bangert, U. and Gass, M. and Kjeldgaard, L. and Patole, S.N. and Lie, L.H. and O'Farrell, N. and Alsop, T.A. and Houlton, A. and Horrocks, B.R.
(2007) Evaporation and deposition of alkyl-capped silicon nanocrystals in ultrahigh vacuum
In Nature Nanotechnology; pp. 486-489
DOI: 10.1038/nnano.2007.224

2007

Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers
Ng, J. and Bangert, U. and Missous, M.
(2007) Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers
In Physica Status Solidi (C) Current Topics in Solid State Physics; pp. 2986-2991
DOI: 10.1002/pssc.200675459

2007

Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures
Ng, J.T. and Bangert, U. and Missous, M.
(2007) Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures
In Semiconductor Science and Technology; pp. 80-85
DOI: 10.1088/0268-1242/22/2/014

2007

Electron energy loss spectroscopy of defects in diamond
Bangert, U. and Barnes, R.
(2007) Electron energy loss spectroscopy of defects in diamond
In Physica Status Solidi (A) Applications and Materials Science; pp. 2201-2210
DOI: 10.1002/pssa.200675442

2006

Ultra-high resolution EEL studies of domains in Perovskite
Bangert, U. and Falke, U. and Weidenkaff, A.
(2006) Ultra-high resolution EEL studies of domains in Perovskite
In Journal of Physics: Conference Series; pp. 17-20
DOI: 10.1088/1742-6596/26/1/004

2006

Electron energy loss spectroscopic studies of brown diamonds
Bangert, U. and Barnes, R. and Hounsome, L.S. and Jones, R. and Blumenau, A.T. and Briddon, P.R. and Shaw, M.J. and Öberg, S.
(2006) Electron energy loss spectroscopic studies of brown diamonds
In Philosophical Magazine; pp. 4757-4779
DOI: 10.1080/14786430600776348

2006

Bright enough to see atoms?
Bleloch, A.L. and Falke, U. and Bangert, U.
(2006) Bright enough to see atoms?
In Microscopy and Microanalysis; pp. 1356-1357
DOI: 10.1017/S1431927606067468

2006

Structure and composition of nanoscopic domains in functional perovskite-type materials
Weidenkaff, A. and Aguirre, M.H. and Lippert, T. and Falke, U. and Bangert, U.
(2006) Structure and composition of nanoscopic domains in functional perovskite-type materials
In Chimia; pp. 742-748
DOI: 10.2533/chimia.2006.742

2006

Redshift and optical anisotropy of collective π -volume modes in multiwalled carbon nanotubes
Seepujak, A. and Bangert, U. and Harvey, A.J. and Costa, P.M.F.J. and Green, M.L.H.
(2006) Redshift and optical anisotropy of collective π -volume modes in multiwalled carbon nanotubes
In Physical Review B - Condensed Matter and Materials Physics;
DOI: 10.1103/PhysRevB.74.075402

2006

EEL calculations and measurements of graphite and graphitic-CN<inf>x</inf>core-losses
Seepujak, A. and Bangert, U. and Harvey, A.J. and Blank, V.D. and Kulnitskiy, B.A. and Batov, D.V.
(2006) EEL calculations and measurements of graphite and graphitic-CN<inf>x</inf>core-losses
In Journal of Physics: Conference Series; pp. 161-164
DOI: 10.1088/1742-6596/26/1/038

2006

Nature of domains in lanthanum calcium cobaltite perovskite revealed by atomic resolution Z-contrast and electron energy loss spectroscopy
Bangert, U. and Falke, U. and Weidenkaff, A.
(2006) Nature of domains in lanthanum calcium cobaltite perovskite revealed by atomic resolution Z-contrast and electron energy loss spectroscopy
In Materials Science and Engineering B: Solid-State Materials for Advanced Technology; pp. 30-36
DOI: 10.1016/j.mseb.2006.04.044

2006

Combined TEM and STEM study of the brown colouration of natural diamonds
Barnes, R. and Bangert, U. and Martineau, P. and Fisher, D. and Jones, R. and Hounsome, L.
(2006) Combined TEM and STEM study of the brown colouration of natural diamonds
In Journal of Physics: Conference Series; pp. 157-160
DOI: 10.1088/1742-6596/26/1/037

2006

HR-TEM imaging and image simulation of vacancy clusters in brown diamond
Barnes, R. and Bangert, U. and Martineau, P.
(2006) HR-TEM imaging and image simulation of vacancy clusters in brown diamond
In Physica Status Solidi (A) Applications and Materials Science; pp. 3081-3087
DOI: 10.1002/pssa.200671111

2006

Red-shift of carbon nanotube surface plasmon EEL features utilising a dielectric filling
Seepujak, A. and Bangert, U. and Harvey, J.
(2006) Red-shift of carbon nanotube surface plasmon EEL features utilising a dielectric filling
In Journal of Physics: Conference Series; pp. 85-88
DOI: 10.1088/1742-6596/26/1/020

2005

Joint density of states at extended defects in CVD diamond, observed via highly spatially resolved electron energy loss spectroscopy
Bangert, U. and Harvey, A.J. and Schreck, M. and Hoermann, F.
(2005) Joint density of states at extended defects in CVD diamond, observed via highly spatially resolved electron energy loss spectroscopy
In Physica Status Solidi (A) Applications and Materials Science; pp. 2188-2193
DOI: 10.1002/pssa.200561913

2005

Extended defect related energy loss in CVD diamond revealed by spectrum imaging in a dedicated STEM
Bangert, U. and Harvey, A.J. and Schreck, M. and Hörmann, F.
(2005) Extended defect related energy loss in CVD diamond revealed by spectrum imaging in a dedicated STEM
In Ultramicroscopy; pp. 46-56
DOI: 10.1016/j.ultramic.2005.02.007

2005

3D spectrum imaging of multi-wall carbon nanotube coupled π-surface modes utilising electron energy-loss spectra acquired using a STEM/Enfina system
Seepujak, A. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J. and Blank, V.D. and Kulnitskiy, B.A. and Batov, D.V.
(2005) 3D spectrum imaging of multi-wall carbon nanotube coupled π-surface modes utilising electron energy-loss spectra acquired using a STEM/Enfina system
In Ultramicroscopy; pp. 57-72
DOI: 10.1016/j.ultramic.2005.02.008

2005

Study of the electronic structure of carbon materials near the bandgap using electron energy loss spectroscopy
Alexandrou, I. and Chremmou, K. and Papworth, A.J. and Bangert, U. and Amaratunga, G.A.J. and Kiely, C.J.
(2005) Study of the electronic structure of carbon materials near the bandgap using electron energy loss spectroscopy
In Diamond and Related Materials; pp. 1522-1528
DOI: 10.1016/j.diamond.2005.04.004

2004

EEL analysis of La<inf>0.6</inf>Ca<inf>0.4</inf>CoO<inf>3</inf>perovskite films for air based batteries using UHV enfina in a dedicated STEM
Jones, H. and Bangert, U. and Weidenkaff, A. and Papworth, A.
(2004) EEL analysis of La<inf>0.6</inf>Ca<inf>0.4</inf>CoO<inf>3</inf>perovskite films for air based batteries using UHV enfina in a dedicated STEM
In Microscopy and Microanalysis; pp. 872-873
DOI: 10.1017/S143127604882588

2004

Single molecular precursor for synthesis of GaAs nanoparticles
Malik, M.A. and Afzaal, M. and O'Brien, P. and Bangert, U. and Hamilton, B.
(2004) Single molecular precursor for synthesis of GaAs nanoparticles
In Materials Science and Technology; pp. 959-963
DOI: 10.1179/026708304225019786

2004

Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors
Gutiérrez-Sosa, A. and Bangert, U. and Fall, C.J. and Jpnes, R. and Blumenau, A.T. and Briddon, P.R. and Frauenheim, T.
(2004) Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors
In Design and Nature; pp. 33-36

2004

Tuning the energy of split surface electron energy-loss resonances excited on a multi-wall carbon nanotube
Seepujak, A. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J. and Papworth, A. and Blank, V.D. and Kulnitskiy, B.A. and Batov, D.V.
(2004) Tuning the energy of split surface electron energy-loss resonances excited on a multi-wall carbon nanotube
In Microscopy and Microanalysis; pp. 868-869
DOI: 10.1017/S143127604882540

2004

Local investigation of electronic structure modulation in BaPb <inf>x</inf>Bi <inf>1-x</inf>O <inf>3</inf> via highly spatially resolved low-loss electron energy loss spectroscopy
Gutiérrez-Sosa, A. and Bangert, U. and Flavell, W.R.
(2004) Local investigation of electronic structure modulation in BaPb <inf>x</inf>Bi <inf>1-x</inf>O <inf>3</inf> via highly spatially resolved low-loss electron energy loss spectroscopy
In Design and Nature; pp. 537-540

2004

Characterization of CNTs filled with magnesium oxides
Gutierrez-Sosa, A. and Seepujak, A. and Bangert, U. and Kulnitskiy, B.A. and Polyakov, E.V. and Batov, D.V. and Blank, V.D.
(2004) Characterization of CNTs filled with magnesium oxides
In Microscopy and Microanalysis; pp. 870-871
DOI: 10.1017/S143127604882564

2004

Dislocation-induced electronic states and point-defect atmospheres evidenced by electron energy loss imaging
Bangert, U. and Harvey, A.J. and Jones, R. and Fall, C.J. and Blumenau, A.T. and Briddon, R. and Schreck, M. and Hörmann, F.
(2004) Dislocation-induced electronic states and point-defect atmospheres evidenced by electron energy loss imaging
In New Journal of Physics; pp. 1-10
DOI: 10.1088/1367-2630/6/1/184

2004

Resonance-filtered imaging of collective pi-states in a carbon nanotube using electron energy-loss spectra acquired in an enfina / STEM system
Seepujak, A. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J. and Blank, V.D. and Kulnitskiy, B.A. and Batov, D.V.
(2004) Resonance-filtered imaging of collective pi-states in a carbon nanotube using electron energy-loss spectra acquired in an enfina / STEM system
In Microscopy and Microanalysis; pp. 844-845
DOI: 10.1017/S143127604882539

2004

EEL spectrum imaging of extended defects in diamond using UHV Enfina in a dedicated STEM
Bangert, U. and Harvey, A.J. and Jones, R. and Fall, C.J. and Papworth, A.
(2004) EEL spectrum imaging of extended defects in diamond using UHV Enfina in a dedicated STEM
In Microscopy and Microanalysis; pp. 886-887
DOI: 10.1017/S143127604882618

2003

Formation of N- containing C-nanotubes and nanofibres by carbon resistive heating under high nitrogen pressure
Blank, V.D. and Polyakov, E.V. and Batov, D.V. and Kulnitskiy, B.A. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J. and Seepujak, A.
(2003) Formation of N- containing C-nanotubes and nanofibres by carbon resistive heating under high nitrogen pressure
In Diamond and Related Materials; pp. 864-869
DOI: 10.1016/S0925-9635(02)00378-3

2003

Energy loss spectroscopy of dislocations in GaN and diamond: A comparison of experiment and calculations
Gutiérrez-Sosa, A. and Bangert, U. and Harvey, A.J. and Fall, C. and Jones, R.
(2003) Energy loss spectroscopy of dislocations in GaN and diamond: A comparison of experiment and calculations
In Diamond and Related Materials; pp. 1108-1112
DOI: 10.1016/S0925-9635(02)00366-7

2003

Electron energy loss studies of dislocations in GaN thin films
Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J. and Fall, C.J. and Jones, R.
(2003) Electron energy loss studies of dislocations in GaN thin films
In Journal of Applied Physics; pp. 2728-2735
DOI: 10.1063/1.1542690

2003

Investigations of chemical and electronic inhomogeneities in BaPb<inf>1-x</inf>Bi<inf>x</inf>O<inf>3</inf>via highly spatially resolved electron energy loss spectroscopy
Gutiérrez-Sosa, A. and Bangert, U. and Flavell, W.R.
(2003) Investigations of chemical and electronic inhomogeneities in BaPb<inf>1-x</inf>Bi<inf>x</inf>O<inf>3</inf>via highly spatially resolved electron energy loss spectroscopy
In Journal of Applied Physics; pp. 6639-6643
DOI: 10.1063/1.1620374

2002

Calculated and experimental low-loss electron energy loss spectra of dislocations in diamond and GaN
Jones, R. and Fall, C.J. and Gutiérrez-Sosa, A. and Bangert, U. and Heggie, M.I. and Blumenau, A.T. and Frauenheim, T. and Briddon, P.R.
(2002) Calculated and experimental low-loss electron energy loss spectra of dislocations in diamond and GaN
In Journal of Physics Condensed Matter; pp. 12793-12800
DOI: 10.1088/0953-8984/14/48/318

2002

Electron microscopy and electron energy loss spectroscopy studies of carbon fiber formation at Fe catalysts
Blank, V.D. and Kulnitskiy, B.A. and Batov, D.V. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J.
(2002) Electron microscopy and electron energy loss spectroscopy studies of carbon fiber formation at Fe catalysts
In Journal of Applied Physics; pp. 1657-1660
DOI: 10.1063/1.1425079

2002

Transmission electron microscopy studies of nanofibers formed on Fe<inf>7</inf>C<inf>3</inf>-carbide
Blank, V.D. and Kulnitskiy, B.A. and Batov, D.V. and Bangert, U. and Gutiérrez-Sosa, A. and Harvey, A.J.
(2002) Transmission electron microscopy studies of nanofibers formed on Fe<inf>7</inf>C<inf>3</inf>-carbide
In Diamond and Related Materials; pp. 931-934
DOI: 10.1016/S0925-9635(01)00545-3

2002

Dislocations in diamond: Electron energy-loss spectroscopy
Fall, C.J. and Blumenau, A.T. and Blumenau, A.T. and Jones, R. and Briddon, P.R. and Frauenheim, T. and Gutiérrez-Sosa, A. and Bangert, U. and E. Mora, A. and Steeds, J.W. and Butler, J.E.
(2002) Dislocations in diamond: Electron energy-loss spectroscopy
In Physical Review B - Condensed Matter and Materials Physics; pp. 2052061-2052067
DOI: 10.1103/PhysRevB.65.205206

2002

Band-gap-related energies of threading dislocations and quantum wells in group-III nitride films as derived from electron energy loss spectroscopy
Gutiérrez-Sosa, A. and Bangert, U. and Harvey, A.J. and Fall, C.J. and Jones, R. and Briddon, P.R. and Heggie, M.I.
(2002) Band-gap-related energies of threading dislocations and quantum wells in group-III nitride films as derived from electron energy loss spectroscopy
In Physical Review B - Condensed Matter and Materials Physics; pp. 353021-3530210
DOI: 10.1103/PhysRevB.66.035302

2001

Strain seeding of Ge quantum dots grown on Si (001)
Dunbar, A. and Halsall, M. and Dawson, P. and Bangert, U. and Shiraki, Y. and Miura, M.
(2001) Strain seeding of Ge quantum dots grown on Si (001)
In Physica Status Solidi (B) Basic Research; pp. 257-260
DOI: 10.1002/1521-3951(200103)224:1&lt;257::AID-PSSB257&gt;3.0.CO;2-K

2001

The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001)
Dunbar, A. and Halsall, M. and Dawson, P. and Bangert, U. and Miura, M. and Shiraki, Y.
(2001) The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001)
In Applied Physics Letters; pp. 1658-1660
DOI: 10.1063/1.1352660

2001

Three-dimensional compositional analysis of quantum dots
Harvey, A. and Davock, H. and Dunbar, A. and Bangert, U. and Goodhew, P.J.
(2001) Three-dimensional compositional analysis of quantum dots
In Journal of Physics D: Applied Physics; pp. 636-644
DOI: 10.1088/0022-3727/34/4/326

2001

Structural, compositional and optical properties of self-organised Ge quantum dots
Dunbar, A. and Bangert, U. and Dawson, P. and Halsall, M. and Shiraki, Y. and Miura, M. and Berbezier, I. and Joyce, B.A. and Zhang, J.
(2001) Structural, compositional and optical properties of self-organised Ge quantum dots
In Physica Status Solidi (B) Basic Research; pp. 265-269
DOI: 10.1002/1521-3951(200103)224:1&lt;265::AID-PSSB265&gt;3.0.CO;2-O

2000

Indium segregation in InGaN quantum-well structures
Duxbury, N. and Bangert, U. and Dawson, P. and Thrush, E.J. and Van Der Stricht, W. and Jacobs, K. and Moerman, I.
(2000) Indium segregation in InGaN quantum-well structures
In Applied Physics Letters; pp. 1600-1602
DOI: 10.1063/1.126108

1999

Nanocarbons formed in a hot isostatic pressure apparatus
Blank, V.D. and Polyakov, E.V. and Kulnitskiy, B.A. and Nuzhdin, A.A. and Alshevskiy, Y.L. and Bangert, U. and Harvey, A.J. and Davock, H.J.
(1999) Nanocarbons formed in a hot isostatic pressure apparatus
In Thin Solid Films; pp. 86-90
DOI: 10.1016/S0040-6090(98)01453-9

1999

Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system
Halsall, M.P. and Dunbar, A.D.F. and Bangert, U.
(1999) Electron diffraction and Raman studies of the effect of substrate misorientation on ordering in the AlGaInP system
In Journal of Applied Physics; pp. 199-202
DOI: 10.1063/1.369469

1999

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
Duxbury, N. and Dawson, P. and Bangert, U. and Thrush, E.J. and Van Der Stricht, W. and Jacobs, K. and Moerman, I.
(1999) Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
In Physica Status Solidi (B) Basic Research; pp. 355-359
DOI: 10.1002/(SICI)1521-3951(199911)216:1&lt;355::AID-PSSB355&gt;3.0.CO;2-K

1998

Correlation between microstructure and localized band gap of GaN grown on SiC
Bangert, U. and Harvey, A. and Davidson, J. and Keyse, R. and Dieker, C.
(1998) Correlation between microstructure and localized band gap of GaN grown on SiC
In Journal of Applied Physics; pp. 7726-7729
DOI: 10.1063/1.367945

1998

The effect of high compressive strain on the operation of AlGaInP quantum-well lasers
Mogensen, P.C. and Hall, S.A. and Smowton, P.M. and Bangert, U. and Blood, P. and Dawson, P.
(1998) The effect of high compressive strain on the operation of AlGaInP quantum-well lasers
In IEEE Journal of Quantum Electronics; pp. 1652-1658
DOI: 10.1109/3.709581

1997

Highly spatially resolved electron energy-loss spectroscopy in the bandgap regime of GaN
Bangert, U. and Harvey, A.J. and Freundt, D. and Keyse, R.
(1997) Highly spatially resolved electron energy-loss spectroscopy in the bandgap regime of GaN
In Journal of Microscopy; pp. 237-242
DOI: 10.1046/j.1365-2818.1997.2640821.x

1997

Assessment of electron energy-loss spectroscopy below 5 eV in semiconductor materials in a VG STEM
Bangert, U. and Harvey, A.J. and Keyse, R.
(1997) Assessment of electron energy-loss spectroscopy below 5 eV in semiconductor materials in a VG STEM
In Ultramicroscopy; pp. 173-180
DOI: 10.1016/S0304-3991(97)00025-9

1996

Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope
Bangert, U. and Harvey, A.J. and Dieker, C. and Hartmann, A. and Keyse, R.
(1996) Highly spatially resolved X-ray analysis of semiconductor alloys and nanostructures in a scanning transmission electron microscope
In Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties; pp. 1421-1437
DOI: 10.1080/01418619608240733

1996

Chemical nature of the luminescent centre in fresh and aged porous silicon layers
Gardelis, S. and Bangert, U. and Hamilton, B. and Pettifer, R.F. and Hill, D.A. and Keyse, R. and Teehan, D.
(1996) Chemical nature of the luminescent centre in fresh and aged porous silicon layers
In Applied Surface Science; pp. 408-412
DOI: 10.1016/0169-4332(96)00088-8

1996

Photoluminescence and transmission electron microscopy investigation of SiGe quantum wires grown on patterned Si substrates
Hartmann, A. and Dieker, C. and Bangert, U. and Loo, R. and Vescan, L. and Lüth, H.
(1996) Photoluminescence and transmission electron microscopy investigation of SiGe quantum wires grown on patterned Si substrates
In Applied Surface Science; pp. 502-509
DOI: 10.1016/S0169-4332(96)00194-8

1996

Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices
Bangert, U. and Harvey, A.J. and Dieker, C. and Hardtdegen, H.
(1996) Suppression of wavy growth in metalorganic vapor phase epitaxy grown GalnAs/InP superlattices
In Applied Physics Letters; pp. 2101-2103

1995

Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs
Bangert, U. and Tang, B. and Missous, M.
(1995) Thermal behaviour of aluminium films grown by molecular beam epitaxy on GaAs
In Journal of Crystal Growth; pp. 223-230
DOI: 10.1016/0022-0248(95)00194-8

1995

Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth
Bangert, U. and Harvey, A.J. and Dieker, C. and Hartdegen, H. and Vescan, L. and Smith, A.
(1995) Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth
In Journal of Applied Physics; pp. 811-816
DOI: 10.1063/1.360270

1995

Double-Crystal X-Ray Diffraction, Electron Diffraction, and High Resolution Electron Microscopy of Luminescent Porous Silicon
Gardelis, S. and Bangert, U. and Harvey, A.J. and Hamilton, B.
(1995) Double-Crystal X-Ray Diffraction, Electron Diffraction, and High Resolution Electron Microscopy of Luminescent Porous Silicon
In Journal of the Electrochemical Society; pp. 2094-2101
DOI: 10.1149/1.2044247

1995

The correlation between structural and optical properties of luminescent porous silicon
Gardelis, S. and Bangert, U. and Hamilton, B.
(1995) The correlation between structural and optical properties of luminescent porous silicon
In Thin Solid Films; pp. 167-170
DOI: 10.1016/0040-6090(94)05646-U

1995

Nucleation of wavy growth modes in quantum well stacks of III-V compound alloys
Bangert, U. and Harvey, A.J. and Dieker, C. and Hardtdegen, H.
(1995) Nucleation of wavy growth modes in quantum well stacks of III-V compound alloys
In Journal of Crystal Growth; pp. 115-126
DOI: 10.1016/0022-0248(94)01012-9

1995

Photoluminescence and microstructure of self-ordered grown SiGe/Si quantum wires
Hartmann, A. and Dieker, C. and Loo, R. and Vescan, L. and Lueth, H. and Bangert, U.
(1995) Photoluminescence and microstructure of self-ordered grown SiGe/Si quantum wires
In Applied Physics Letters; pp. 1888-1890
DOI: 10.1063/1.114366

1994

Strain relaxation in strained buried heterostructure lasers
Faux, D.A. and Howells, S.G. and Bangert, U. and Harvey, A.J.
(1994) Strain relaxation in strained buried heterostructure lasers
In Applied Physics Letters; pp. 1271-1273
DOI: 10.1063/1.110862

1994

Stress distributions and defect nucleation in buried heterostructure laser diodes
Bangert, U. and Harvey, A.J. and Howells, S. and Faux, D.A. and Dieker, C.
(1994) Stress distributions and defect nucleation in buried heterostructure laser diodes
In Journal of Applied Physics; pp. 3392-3395
DOI: 10.1063/1.356098

1994

Optimization of growth conditions for strain compensated Ga<inf>0.32</inf>In<inf>0.68</inf>As/Ga<inf>0.61</inf>In<inf>0.39</inf>As multiple quantum wells
Smith, A.D. and Briggs, A.T.R. and Scarrott, K. and Zhou, X. and Bangert, U.
(1994) Optimization of growth conditions for strain compensated Ga<inf>0.32</inf>In<inf>0.68</inf>As/Ga<inf>0.61</inf>In<inf>0.39</inf>As multiple quantum wells
In Applied Physics Letters; pp. 2311-2313
DOI: 10.1063/1.112727

1993

Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current
Bangert, U. and Harvey, A.J. and Goodwin, A.R. and Briggs, A.T.R.
(1993) Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current
In physica status solidi (a); pp. 351-362
DOI: 10.1002/pssa.2211370208

1993

Diffraction contrast near heterostructure boundariesits nature and its application
Bangert, U. and Harvey, A.J.
(1993) Diffraction contrast near heterostructure boundariesits nature and its application
In Microscopy Research and Technique; pp. 288-298
DOI: 10.1002/jemt.1070240403

1993

Evidence for strain relaxation via composition fluctuations in strained quaternary / quaternary and quaternary / ternary multiple quantum well structures
Bangert, U. and Harvey, A.J. and Wilkinson, V.A. and Dieker, C. and Jowett, J.M. and Smith, A.D. and Perrin, S.D. and Gibbins, C.J.
(1993) Evidence for strain relaxation via composition fluctuations in strained quaternary / quaternary and quaternary / ternary multiple quantum well structures
In Journal of Crystal Growth; pp. 231-240
DOI: 10.1016/0022-0248(93)90267-Z

1993

Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy
Nair, R.R. and Anissimova, S. and Zan, R. and Blake, P. and Blake, J.R. and Geim, A.K. and Bangert, U. and Golovanov, A.P. and Morozov, S.V. and Novoselov, K.S. and Latychevskaia, T.
(1993) Graphene as a transparent conductive support for studying biological molecules by transmission electron microscopy
In IEEE Transactions on Information Theory; pp. 1057-1064
DOI: 10.1109/18.256515

1993

The determination of the strain in GaAs/Ga<inf>x</inf> In<inf>1-x</inf> As strained-layer structures from measurements of thickness fringe displacements
Harvey, A.J. and Faux, D.A. and Bangert, U. and Charsley, P.
(1993) The determination of the strain in GaAs/Ga<inf>x</inf> In<inf>1-x</inf> As strained-layer structures from measurements of thickness fringe displacements
In Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties; pp. 433-446
DOI: 10.1080/01418619308207169

1991

Strain evaluation in III-V compound epitaxial layers
Bangert, U. and Charsley, P. and Faux, D.A. and Harvey, J.A.
(1991) Strain evaluation in III-V compound epitaxial layers
In Superlattices and Microstructures; pp. 91-94
DOI: 10.1016/0749-6036(91)90099-D

1991

Microtwinning in gaalas and galnas due to indentation at room temperature
Haswell, R. and Bangert, U. and Charsley, P.
(1991) Microtwinning in gaalas and galnas due to indentation at room temperature
In Philosophical Magazine Letters; pp. 67-72
DOI: 10.1080/09500839108201961

1991

Transmission electron microscopy of aged double-channel planar buried heterostructure lasers
Bangert, U. and Charsley, P. and Davies, I.G.A. and Goodwin, A.R.
(1991) Transmission electron microscopy of aged double-channel planar buried heterostructure lasers
In Journal of Materials Science Letters; pp. 1158-1161
DOI: 10.1007/BF00744113

1991

Strain determination in iii-v compound heterostructure strained layers by comparison of experimental and simulated electron diffraction contrast in 90° wedges
Harvey, A.J. and Faux, D.A. and Bangert, U. and Charsley, P.
(1991) Strain determination in iii-v compound heterostructure strained layers by comparison of experimental and simulated electron diffraction contrast in 90° wedges
In Philosophical Magazine Letters; pp. 241-244
DOI: 10.1080/09500839108205997

1990

Electron microscope studies of localized changes in dislocation configurations during fatigue
Bangert, U. and Charsley, P.
(1990) Electron microscope studies of localized changes in dislocation configurations during fatigue
In Materials Science and Engineering A; pp. 39-44
DOI: 10.1016/0921-5093(90)90094-J

1989

Effects of strain on the electron diffraction contrast at III-V compound heterostructure interfaces
Bangert, U. and Charsley, P.
(1989) Effects of strain on the electron diffraction contrast at III-V compound heterostructure interfaces
In Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties; pp. 629-643
DOI: 10.1080/01418618908229788

1989

The effect of temperature and amplitude on dislocation structures in cyclically deformed pure aluminium
Charsley, P. and Bangert, U. and Appleby, L.J.
(1989) The effect of temperature and amplitude on dislocation structures in cyclically deformed pure aluminium
In Materials Science and Engineering A; pp. 231-236
DOI: 10.1016/0921-5093(89)90311-0

1986

Low-energy (2-5 keV) argon damage in silicon
Bangert, U. and Goodhew, P.J. and Jeynes, C. and Wilson, I.H.
(1986) Low-energy (2-5 keV) argon damage in silicon
In Journal of Physics D: Applied Physics; pp. 589-603
DOI: 10.1088/0022-3727/19/4/013

1984

Damage effects of ion atom beam milling on MNOS (Al/Si<inf>3</inf>N<inf>4</inf>/SiO<inf>2</inf>/Si) capacitors
Bangert, U. and Belson, J. and Wilson, I.H.
(1984) Damage effects of ion atom beam milling on MNOS (Al/Si<inf>3</inf>N<inf>4</inf>/SiO<inf>2</inf>/Si) capacitors
In Nuclear Inst. and Methods in Physics Research, B; pp. 370-373
DOI: 10.1016/0168-583X(84)90093-4

1984

Damage effects in silicon and MNOS structures caused by beams of ionized and neutral argon atoms with energies below 5 keV
Bangert, U. and Jeynes, C. and Goodhew, P. and Wilson, I.
(1984) Damage effects in silicon and MNOS structures caused by beams of ionized and neutral argon atoms with energies below 5 keV
In Vacuum; pp. 163-166
DOI: 10.1016/0042-207X(84)90121-0

1983

Radiation enhanced diffusion of krypton and uranium impurities in LiF
Bangert, U. and Arafah, D.E. and Sassmannshausen, U. and Thiel, K. and Townsend, P.D.
(1983) Radiation enhanced diffusion of krypton and uranium impurities in LiF
In Nuclear Instruments and Methods In Physics Research; pp. 1111-1115
DOI: 10.1016/0167-5087(83)90927-4

1983

Ion range studies of cerium implanted CaF2
Arafah, D.E. and Bangert, U. and Thiel, K. and Townsend, P.D.
(1983) Ion range studies of cerium implanted CaF2
In Nuclear Instruments and Methods In Physics Research; pp. 1105-1110
DOI: 10.1016/0167-5087(83)90926-2

1983

DAMAGE EFFECTS OF ION/ATOM BEAM MILLING ON MNOS (Al/Si<inf>3</inf>N<inf>4</inf>/SiO<inf>2</inf>/Si) CAPACITORS.
Bangert, U. and Belson, J. and Wilson, I.H.
(1983) DAMAGE EFFECTS OF ION/ATOM BEAM MILLING ON MNOS (Al/Si<inf>3</inf>N<inf>4</inf>/SiO<inf>2</inf>/Si) CAPACITORS.
In Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms; pp. 370-373

1982

ION RANGE STUDIES OF CERIUM IMPLANTED CaF<inf>2</inf>.
Arafah, D.E. and Bangert, U. and Thiel, K. and Townsend, P.D.
(1982) ION RANGE STUDIES OF CERIUM IMPLANTED CaF<inf>2</inf>.
In Nuclear instruments and methods in physics research; pp. 1105-1110
DOI: 10.1016/0167-5087(83)90926-2

1982

RADIATION ENHANCED DIFFUSION OF KRYPTON AND URANIUM IMPURITIES IN LiF.
Bangert, U. and Arafah, D.E. and Sassmannshausen, U. and Thiel, K. and Townsend, P.D.
(1982) RADIATION ENHANCED DIFFUSION OF KRYPTON AND URANIUM IMPURITIES IN LiF.
In Nuclear instruments and methods in physics research; pp. 1111-1115
DOI: 10.1016/0167-5087(83)90927-4

1981

THERMALLY INDUCED CHANGES IN THE TL OF ION IMPLANTED CaF<inf>2</inf>- 2.
Bangert, U. and Thiel, K. and Ahmed, K. and Townsend, P.D.
(1981) THERMALLY INDUCED CHANGES IN THE TL OF ION IMPLANTED CaF<inf>2</inf>- 2.
In Radiation effects; pp. 153-160

1981

EMISSION SPECTRA OF TL PRODUCED BY ION IMPLANTED CaF<inf>2</inf>- 1.
Bangert, U. and Thiel, K. and Ahmed, K. and Townsend, P.D.
(1981) EMISSION SPECTRA OF TL PRODUCED BY ION IMPLANTED CaF<inf>2</inf>- 1.
In Radiation effects; pp. 143-151

1981

Uranium redistribution in weathered conglomerates of the early precambrian pongola supergroup, South Africa - inferences from a study by alpha spectrometry and fission track micromapping
Saager, R. and Thiel, K. and Hennig, G.J. and Bangert, U.
(1981) Uranium redistribution in weathered conglomerates of the early precambrian pongola supergroup, South Africa - inferences from a study by alpha spectrometry and fission track micromapping
In Journal of Geochemical Exploration; pp. 233-249
DOI: 10.1016/0375-6742(81)90065-0

1981

Uranium Redistribution in Weathered Conglomerates of the Early Precambrian Pongola Supergroup, South Africa â€' Inferences from a Study by Alpha Spectrometry and Fission Track Micromapping
Saager, R. and Thiel, K. and Hennig, G.J. and Bangert, U.
(1981) Uranium Redistribution in Weathered Conglomerates of the Early Precambrian Pongola Supergroup, South Africa â€' Inferences from a Study by Alpha Spectrometry and Fission Track Micromapping
In Developments in Economic Geology; pp. 233-249
DOI: 10.1016/B978-0-444-42012-1.50018-0

1980

Uranium series dating of calcite formations in caves: recent results and a comparative study on age determination via Th-230/U- 234, C14, TL and ESR.
Henning, G.J. and Bangert, U. and Herr, W. and Freundlich, J.
(1980) Uranium series dating of calcite formations in caves: recent results and a comparative study on age determination via Th-230/U- 234, C14, TL and ESR.
In Revue d'Archeometrie; pp. 91-100