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Home | Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth
Temperature and strain dependence of the roughening transition in III-V semiconductor and SiGe epitaxial growth
Bangert, U. and Harvey, A.J. and Dieker, C. and Hartdegen, H. and Vescan, L. and Smith, A.
Journal of Applied Physics (1995)
10.1063/1.360270