Skip to main content

Publication

Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
Duxbury, N. and Dawson, P. and Bangert, U. and Thrush, E.J. and Van Der Stricht, W. and Jacobs, K. and Moerman, I.
(1999)
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD in Physica Status Solidi (B) Basic Research 10.1002/(SICI)1521-3951(199911)216:1<355::AID-PSSB355>3.0.CO;2-K