Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
(1999)
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD in Physica Status Solidi (B) Basic Research 10.1002/(SICI)1521-3951(199911)216:1<355::AID-PSSB355>3.0.CO;2-K
Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD in Physica Status Solidi (B) Basic Research 10.1002/(SICI)1521-3951(199911)216:1<355::AID-PSSB355>3.0.CO;2-K